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Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.
- Source :
-
Optics express [Opt Express] 2014 Oct 20; Vol. 22 (21), pp. 25993-6004. - Publication Year :
- 2014
-
Abstract
- Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 22
- Issue :
- 21
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 25401633
- Full Text :
- https://doi.org/10.1364/OE.22.025993