Cite
Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
MLA
Liu, Ao, et al. “Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrO(x) Dielectric.” ACS Applied Materials & Interfaces, vol. 6, no. 20, Oct. 2014, pp. 17364–69. EBSCOhost, https://doi.org/10.1021/am505602w.
APA
Liu, A., Liu, G. X., Zhu, H. H., Xu, F., Fortunato, E., Martins, R., & Shan, F. K. (2014). Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. ACS Applied Materials & Interfaces, 6(20), 17364–17369. https://doi.org/10.1021/am505602w
Chicago
Liu, Ao, Guo Xia Liu, Hui Hui Zhu, Feng Xu, Elvira Fortunato, Rodrigo Martins, and Fu Kai Shan. 2014. “Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrO(x) Dielectric.” ACS Applied Materials & Interfaces 6 (20): 17364–69. doi:10.1021/am505602w.