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Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.
- Source :
-
Nanoscale research letters [Nanoscale Res Lett] 2014 Jul 26; Vol. 9 (1), pp. 366. Date of Electronic Publication: 2014 Jul 26 (Print Publication: 2014). - Publication Year :
- 2014
-
Abstract
- A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >10(6) cycles are observed with read voltages of -1, 1, and 4 V. However, read endurance is failed with read voltages of -1.5, -2, and -4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >10(3) s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future.
Details
- Language :
- English
- ISSN :
- 1931-7573
- Volume :
- 9
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Nanoscale research letters
- Publication Type :
- Academic Journal
- Accession number :
- 25136279
- Full Text :
- https://doi.org/10.1186/1556-276X-9-366