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Doping a correlated band insulator: a new route to half-metallic behavior.
- Source :
-
Physical review letters [Phys Rev Lett] 2014 Mar 14; Vol. 112 (10), pp. 106406. Date of Electronic Publication: 2014 Mar 12. - Publication Year :
- 2014
-
Abstract
- We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value UAF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of UAF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.
Details
- Language :
- English
- ISSN :
- 1079-7114
- Volume :
- 112
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 24679315
- Full Text :
- https://doi.org/10.1103/PhysRevLett.112.106406