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Doping a correlated band insulator: a new route to half-metallic behavior.

Authors :
Garg A
Krishnamurthy HR
Randeria M
Source :
Physical review letters [Phys Rev Lett] 2014 Mar 14; Vol. 112 (10), pp. 106406. Date of Electronic Publication: 2014 Mar 12.
Publication Year :
2014

Abstract

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value UAF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of UAF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

Details

Language :
English
ISSN :
1079-7114
Volume :
112
Issue :
10
Database :
MEDLINE
Journal :
Physical review letters
Publication Type :
Academic Journal
Accession number :
24679315
Full Text :
https://doi.org/10.1103/PhysRevLett.112.106406