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The synthesis and characterization of Ag-N dual-doped p-type ZnO: experiment and theory.
- Source :
-
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2014 Mar 07; Vol. 16 (9), pp. 4092-7. - Publication Year :
- 2014
-
Abstract
- Ag-N dual-doped ZnO films have been fabricated by a chemical bath deposition method. The p-type conductivity of the dual-doped ZnO:(Ag, N) is stable over a long period of time, and the hole concentration in the ZnO:(Ag, N) is much higher than that in mono-doped ZnO:Ag or ZnO:N. We found that this is because AgZn-NO complex acceptors can be formed in ZnO:(Ag, N). First-principles calculations show that the complex acceptors generate a fully occupied band above the valance band maximum, so the acceptor levels become shallower and the hole concentration is increased. Furthermore, the binding energy of the Ag-N complex in ZnO is negative, so ZnO:(Ag, N) can be stable. These results indicate that the Ag-N dual-doping may be expected to be a potential route to achieving high-quality p-type ZnO for use in a variety of devices.
Details
- Language :
- English
- ISSN :
- 1463-9084
- Volume :
- 16
- Issue :
- 9
- Database :
- MEDLINE
- Journal :
- Physical chemistry chemical physics : PCCP
- Publication Type :
- Academic Journal
- Accession number :
- 24448605
- Full Text :
- https://doi.org/10.1039/c3cp53067a