High-performance nanowire oxide photo-thin film transistor.

Authors :: Ahn SE
Jeon S
Jeon YW
Kim C
Lee MJ
Lee CW
Park J
Song I
Nathan A
Lee S
Chung UI
Source :: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Oct 18; Vol. 25 (39), pp. 5549-54. Date of Electronic Publication: 2013 Aug 27.
Publication Year :: 2013
Abstract: A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.<br /> (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)