Back to Search Start Over

Surface roughness induced electron mobility degradation in InAs nanowires.

Authors :
Wang F
Yip S
Han N
Fok K
Lin H
Hou JJ
Dong G
Hung T
Chan KS
Ho JC
Source :
Nanotechnology [Nanotechnology] 2013 Sep 20; Vol. 24 (37), pp. 375202. Date of Electronic Publication: 2013 Aug 21.
Publication Year :
2013

Abstract

In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15,000 cm(2) V(-1) s(-1) when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.

Details

Language :
English
ISSN :
1361-6528
Volume :
24
Issue :
37
Database :
MEDLINE
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
23965340
Full Text :
https://doi.org/10.1088/0957-4484/24/37/375202