Cite
Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.
MLA
Seo, Jin-Suk, et al. “Solution-Processed Flexible Fluorine-Doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature.” Scientific Reports, vol. 3, 2013, p. 2085. EBSCOhost, https://doi.org/10.1038/srep02085.
APA
Seo, J.-S., Jeon, J.-H., Hwang, Y. H., Park, H., Ryu, M., Park, S.-H. K., & Bae, B.-S. (2013). Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature. Scientific Reports, 3, 2085. https://doi.org/10.1038/srep02085
Chicago
Seo, Jin-Suk, Jun-Hyuck Jeon, Young Hwan Hwang, Hyungjin Park, Minki Ryu, Sang-Hee Ko Park, and Byeong-Soo Bae. 2013. “Solution-Processed Flexible Fluorine-Doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature.” Scientific Reports 3: 2085. doi:10.1038/srep02085.