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Enhanced photocurrents of photosystem I films on p-doped silicon.

Authors :
LeBlanc G
Chen G
Gizzie EA
Jennings GK
Cliffel DE
Source :
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2012 Nov 20; Vol. 24 (44), pp. 5959-62. Date of Electronic Publication: 2012 Sep 04.
Publication Year :
2012

Abstract

Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I.<br /> (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Subjects

Subjects :
Electromagnetic Fields
Materials Testing
Photosystem I Protein Complex chemistry
Photosystem I Protein Complex radiation effects
Semiconductors
Silicon chemistry
Silicon radiation effects

Details

Language :
English
ISSN :
1521-4095
Volume :
24
Issue :
44
Database :
MEDLINE
Journal :
Advanced materials (Deerfield Beach, Fla.)
Publication Type :
Academic Journal
Accession number :
22945835
Full Text :
https://doi.org/10.1002/adma.201202794
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