A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors.

A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm(2) V(-1) s(-1) and an on/off ratio of 2 × 10(6) despite its small π-conjugated system. Good FET stability in ambient conditions has also been observed.