Dielectric-constant-enhanced hall mobility in complex oxides.

Authors :: Siemons W
McGuire MA
Cooper VR
Biegalski MD
Ivanov IN
Jellison GE
Boatner LA
Sales BC
Christen HM
Source :: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2012 Aug 02; Vol. 24 (29), pp. 3965-9. Date of Electronic Publication: 2012 Jun 21.
Publication Year :: 2012
Abstract: The high dielectric constant of doped ferroelectric KTa(1-x)Nb(x)O(3) is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and optical measurements as well as band structure calculations.<br /> (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)