Strain-mediated phase control and electrolyte-gating of electron-doped manganites.

Authors :: Xiang PH
Asanuma S
Yamada H
Inoue IH
Sato H
Akoh H
Sawa A
Ueno K
Yuan H
Shimotani H
Kawasaki M
Iwasa Y
Source :: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2011 Dec 22; Vol. 23 (48), pp. 5822-7. Date of Electronic Publication: 2011 Nov 22.
Publication Year :: 2011
Abstract: A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.<br /> (Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Subjects :: Electrolytes
Electronics
Electrons
Equipment Design
Magnetics
Materials Testing
Metals chemistry
Microscopy, Atomic Force methods
Nanotechnology instrumentation
Pressure
Temperature
Transistors, Electronic
X-Ray Diffraction
Manganese Compounds chemistry

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