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Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
- Source :
-
Journal of the American Chemical Society [J Am Chem Soc] 2011 Nov 09; Vol. 133 (44), pp. 17548-51. Date of Electronic Publication: 2011 Oct 14. - Publication Year :
- 2011
-
Abstract
- We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO(2) by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO(2) substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V(-1) s(-1) in air and 472 cm(2) V(-1) s(-1) in N(2), which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.
Details
- Language :
- English
- ISSN :
- 1520-5126
- Volume :
- 133
- Issue :
- 44
- Database :
- MEDLINE
- Journal :
- Journal of the American Chemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 21988639
- Full Text :
- https://doi.org/10.1021/ja2063633