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Pockels effect based fully integrated, strained silicon electro-optic modulator.
- Source :
-
Optics express [Opt Express] 2011 Aug 29; Vol. 19 (18), pp. 17212-9. - Publication Year :
- 2011
-
Abstract
- We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2)(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V(mod) and the resulting effective index change Δn(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 19
- Issue :
- 18
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 21935084
- Full Text :
- https://doi.org/10.1364/OE.19.017212