Cite
Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.
MLA
Wen, C. Y., et al. “Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires.” Physical Review Letters, vol. 107, no. 2, July 2011, p. 025503. EBSCOhost, https://doi.org/10.1103/PhysRevLett.107.025503.
APA
Wen, C.-Y., Tersoff, J., Hillerich, K., Reuter, M. C., Park, J. H., Kodambaka, S., Stach, E. A., & Ross, F. M. (2011). Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires. Physical Review Letters, 107(2), 025503. https://doi.org/10.1103/PhysRevLett.107.025503
Chicago
Wen, C-Y, J Tersoff, K Hillerich, M C Reuter, J H Park, S Kodambaka, E A Stach, and F M Ross. 2011. “Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires.” Physical Review Letters 107 (2): 025503. doi:10.1103/PhysRevLett.107.025503.