Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy.

Authors :: Hernández-Maldonado D
Herrera M
Alonso-González P
González Y
González L
Gazquez J
Varela M
Pennycook SJ
Guerrero-Lebrero Mde L
Pizarro J
Galindo PL
Molina SI
Source :: Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada [Microsc Microanal] 2011 Aug; Vol. 17 (4), pp. 578-81. Date of Electronic Publication: 2011 May 27.
Publication Year :: 2011
Abstract: We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1-xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett 61, 557-559].

Language :: English
ISSN :: 1435-8115
Volume :: 17
Issue :: 4
Database :: MEDLINE
Journal :: Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
Publication Type :: Academic Journal
Accession number :: 21615979
Full Text :: https://doi.org/10.1017/S1431927611000213

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