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Linear increases in carbon nanotube density through multiple transfer technique.

Authors :
Shulaker MM
Wei H
Patil N
Provine J
Chen HY
Wong HS
Mitra S
Source :
Nano letters [Nano Lett] 2011 May 11; Vol. 11 (5), pp. 1881-6. Date of Electronic Publication: 2011 Apr 06.
Publication Year :
2011

Abstract

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. We perform multiple transfers, whereby we transfer CNTs from several growth wafers onto the same target surface, thereby linearly increasing CNT density on the target substrate. This process, called transfer of nanotubes through multiple sacrificial layers, is highly scalable, and we demonstrate linear CNT density scaling up to 5 transfers. We also demonstrate that this linear CNT density increase results in an ideal linear increase in drain-source currents of carbon nanotube field effect transistors (CNFETs). Experimental results demonstrate that CNT density can be improved from 2 to 8 CNTs/μm, accompanied by an increase in drain-source CNFET current from 4.3 to 17.4 μA/μm.

Details

Language :
English
ISSN :
1530-6992
Volume :
11
Issue :
5
Database :
MEDLINE
Journal :
Nano letters
Publication Type :
Academic Journal
Accession number :
21469727
Full Text :
https://doi.org/10.1021/nl200063x