Back to Search
Start Over
Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes.
- Source :
-
Nanotechnology [Nanotechnology] 2010 May 28; Vol. 21 (21), pp. 215201. Date of Electronic Publication: 2010 Apr 30. - Publication Year :
- 2010
-
Abstract
- In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.
Details
- Language :
- English
- ISSN :
- 1361-6528
- Volume :
- 21
- Issue :
- 21
- Database :
- MEDLINE
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 20431206
- Full Text :
- https://doi.org/10.1088/0957-4484/21/21/215201