Cite
Dopant distributions in n-MOSFET structure observed by atom probe tomography.
MLA
Inoue, K., et al. “Dopant Distributions in N-MOSFET Structure Observed by Atom Probe Tomography.” Ultramicroscopy, vol. 109, no. 12, Nov. 2009, pp. 1479–84. EBSCOhost, https://doi.org/10.1016/j.ultramic.2009.08.002.
APA
Inoue, K., Yano, F., Nishida, A., Takamizawa, H., Tsunomura, T., Nagai, Y., & Hasegawa, M. (2009). Dopant distributions in n-MOSFET structure observed by atom probe tomography. Ultramicroscopy, 109(12), 1479–1484. https://doi.org/10.1016/j.ultramic.2009.08.002
Chicago
Inoue, K, F Yano, A Nishida, H Takamizawa, T Tsunomura, Y Nagai, and M Hasegawa. 2009. “Dopant Distributions in N-MOSFET Structure Observed by Atom Probe Tomography.” Ultramicroscopy 109 (12): 1479–84. doi:10.1016/j.ultramic.2009.08.002.