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The effect of GaAs(100) surface preparation on the growth of nanowires.

Authors :
Ghosh SC
Kruse P
LaPierre RR
Source :
Nanotechnology [Nanotechnology] 2009 Mar 18; Vol. 20 (11), pp. 115602. Date of Electronic Publication: 2009 Feb 24.
Publication Year :
2009

Abstract

The influence of GaAs(100) substrate surface preparation on Au-catalysed GaAs nanowires was studied. Elongated pits of varying dimensions and orientation were formed on GaAs(100) substrates depending on the interaction with Au and surface oxides. The resulting surface topography is shown to influence the density and orientation of nanowires. [111] B-oriented nanowires nucleated from Au particles lying on the sidewall facets of the pits, while [011]-oriented nanowires nucleated from Au particles lying outside the pits.

Details

Language :
English
ISSN :
1361-6528
Volume :
20
Issue :
11
Database :
MEDLINE
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
19420442
Full Text :
https://doi.org/10.1088/0957-4484/20/11/115602