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Stacking-faults-free zinc Blende GaAs nanowires.

Stacking-faults-free zinc Blende GaAs nanowires.

Authors :
Shtrikman H
Popovitz-Biro R
Kretinin A
Heiblum M
Source :
Nano letters [Nano Lett] 2009 Jan; Vol. 9 (1), pp. 215-9.
Publication Year :
2009

Abstract

Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.

Details

Language :
English
ISSN :
1530-6984
Volume :
9
Issue :
1
Database :
MEDLINE
Journal :
Nano letters
Publication Type :
Academic Journal
Accession number :
19093840
Full Text :
https://doi.org/10.1021/nl8027872