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Stacking-faults-free zinc Blende GaAs nanowires.
Stacking-faults-free zinc Blende GaAs nanowires.
- Source :
-
Nano letters [Nano Lett] 2009 Jan; Vol. 9 (1), pp. 215-9. - Publication Year :
- 2009
-
Abstract
- Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.
Details
- Language :
- English
- ISSN :
- 1530-6984
- Volume :
- 9
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 19093840
- Full Text :
- https://doi.org/10.1021/nl8027872