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Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

Authors :
Zaleszczyk W
Janik E
Presz A
DÅ‚uzewski P
Kret S
Szuszkiewicz W
Morhange JF
Dynowska E
Kirmse H
Neumann W
Petroutchik A
Baczewski LT
Karczewski G
Wojtowicz T
Source :
Nano letters [Nano Lett] 2008 Nov; Vol. 8 (11), pp. 4061-5. Date of Electronic Publication: 2008 Oct 09.
Publication Year :
2008

Abstract

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

Details

Language :
English
ISSN :
1530-6984
Volume :
8
Issue :
11
Database :
MEDLINE
Journal :
Nano letters
Publication Type :
Academic Journal
Accession number :
18842031
Full Text :
https://doi.org/10.1021/nl802449g