Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.

MLA

Wenisch, J., et al. “Control of Magnetic Anisotropy in (Ga,Mn)as by Lithography-Induced Strain Relaxation.” Physical Review Letters, vol. 99, no. 7, Aug. 2007, p. 077201. EBSCOhost, https://doi.org/10.1103/PhysRevLett.99.077201.

APA

Wenisch, J., Gould, C., Ebel, L., Storz, J., Pappert, K., Schmidt, M. J., Kumpf, C., Schmidt, G., Brunner, K., & Molenkamp, L. W. (2007). Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation. Physical Review Letters, 99(7), 077201. https://doi.org/10.1103/PhysRevLett.99.077201

Chicago

Wenisch, J, C Gould, L Ebel, J Storz, K Pappert, M J Schmidt, C Kumpf, G Schmidt, K Brunner, and L W Molenkamp. 2007. “Control of Magnetic Anisotropy in (Ga,Mn)as by Lithography-Induced Strain Relaxation.” Physical Review Letters 99 (7): 077201. doi:10.1103/PhysRevLett.99.077201.