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Large melting-point hysteresis of Ge nanocrystals embedded in SiO2.
- Source :
-
Physical review letters [Phys Rev Lett] 2006 Oct 13; Vol. 97 (15), pp. 155701. Date of Electronic Publication: 2006 Oct 09. - Publication Year :
- 2006
-
Abstract
- The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
Details
- Language :
- English
- ISSN :
- 0031-9007
- Volume :
- 97
- Issue :
- 15
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 17155336
- Full Text :
- https://doi.org/10.1103/PhysRevLett.97.155701