Cite
Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices.
MLA
Moldovan, Grigore, et al. “Low-Voltage Cross-Sectional EBIC for Characterisation of GaN-Based Light Emitting Devices.” Ultramicroscopy, vol. 107, no. 4–5, Apr. 2007, pp. 382–89. EBSCOhost, https://doi.org/10.1016/j.ultramic.2006.10.002.
APA
Moldovan, G., Kazemian, P., Edwards, P. R., Ong, V. K. S., Kurniawan, O., & Humphreys, C. J. (2007). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Ultramicroscopy, 107(4–5), 382–389. https://doi.org/10.1016/j.ultramic.2006.10.002
Chicago
Moldovan, Grigore, Payam Kazemian, Paul R Edwards, Vincent K S Ong, Oka Kurniawan, and Colin J Humphreys. 2007. “Low-Voltage Cross-Sectional EBIC for Characterisation of GaN-Based Light Emitting Devices.” Ultramicroscopy 107 (4–5): 382–89. doi:10.1016/j.ultramic.2006.10.002.