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Imaging of all dangling bonds and their potential on the Ge/Si105 surface by noncontact atomic force microscopy.

Authors :
Eguchi T
Fujikawa Y
Akiyama K
An T
Ono M
Hashimoto T
Morikawa Y
Terakura K
Sakurai T
Lagally MG
Hasegawa Y
Source :
Physical review letters [Phys Rev Lett] 2004 Dec 31; Vol. 93 (26 Pt 1), pp. 266102. Date of Electronic Publication: 2004 Dec 20.
Publication Year :
2004

Abstract

High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge105-(1 x 2) structure formed on the Si105 substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces.

Details

Language :
English
ISSN :
0031-9007
Volume :
93
Issue :
26 Pt 1
Database :
MEDLINE
Journal :
Physical review letters
Publication Type :
Academic Journal
Accession number :
15697993
Full Text :
https://doi.org/10.1103/PhysRevLett.93.266102