Cite
Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters.
MLA
Bauer, A., et al. “Structure Refinement of the Silicon Carbide Polytypes 4H and 6H: Unambiguous Determination of the Refinement Parameters.” Acta Crystallographica. Section A, Foundations of Crystallography, vol. 57, no. Pt 1, Jan. 2001, pp. 60–67. EBSCOhost, https://doi.org/10.1107/s0108767300012915.
APA
Bauer, A., Reischauer, P., Kräusslich, J., Schell, N., Matz, W., & Goetz, K. (2001). Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters. Acta Crystallographica. Section A, Foundations of Crystallography, 57(Pt 1), 60–67. https://doi.org/10.1107/s0108767300012915
Chicago
Bauer, A, P Reischauer, J Kräusslich, N Schell, W Matz, and K Goetz. 2001. “Structure Refinement of the Silicon Carbide Polytypes 4H and 6H: Unambiguous Determination of the Refinement Parameters.” Acta Crystallographica. Section A, Foundations of Crystallography 57 (Pt 1): 60–67. doi:10.1107/s0108767300012915.