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Electronic energy levels of defects that anneal in the 280-K stage in irradiated n-type gallium arsenide.
- Source :
-
Physical review letters [Phys Rev Lett] 1991 Jan 07; Vol. 66 (1), pp. 56-59. - Publication Year :
- 1991
Details
- Language :
- English
- ISSN :
- 1079-7114
- Volume :
- 66
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 10043141
- Full Text :
- https://doi.org/10.1103/PhysRevLett.66.56