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Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limit.
- Source :
-
Physical review. B, Condensed matter [Phys Rev B Condens Matter] 1993 Aug 15; Vol. 48 (7), pp. 4687-4694. - Publication Year :
- 1993
Details
- Language :
- English
- ISSN :
- 0163-1829
- Volume :
- 48
- Issue :
- 7
- Database :
- MEDLINE
- Journal :
- Physical review. B, Condensed matter
- Publication Type :
- Academic Journal
- Accession number :
- 10008953
- Full Text :
- https://doi.org/10.1103/physrevb.48.4687