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Localized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperatures.
- Source :
-
Physical review. B, Condensed matter [Phys Rev B Condens Matter] 1992 Sep 15; Vol. 46 (12), pp. 7755-7764. - Publication Year :
- 1992
Details
- Language :
- English
- ISSN :
- 0163-1829
- Volume :
- 46
- Issue :
- 12
- Database :
- MEDLINE
- Journal :
- Physical review. B, Condensed matter
- Publication Type :
- Academic Journal
- Accession number :
- 10002515
- Full Text :
- https://doi.org/10.1103/physrevb.46.7755