EFFECT OF ANNEALING ON THE PROPERTIES OF CHEMICAL BATH DEPOSITED CdS BUFFER LAYER OF CIS SOLAR CELLS.

The effect of annealing on the properties of chemical bath deposited (CBD) cadmium sulfide (CdS) buffer layer CuInS2 (CIS) solar cell with respect to cell performance is reported. The CdS layer was deposited on the CIS film from CdI2 and thiourea [CS(NH2)2] solutions using ammonia as the complexing agent. Results showed that post-conditional process of chemical bath deposition of CdS layer affected the performance of the CIS solar cells. X-ray diffraction (XRD) results indicated that CdS buffer layers show a hexagonal structure with preferred orientation along the (101) axis without Cd(OH)2 peak at 200°C. The morphologies of CdS films were investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The performance of the CdS/CIGS solar cells was discussed on the basis of characteristics and post-deposition conditions of the chemical bath deposited CdS layer. [ABSTRACT FROM AUTHOR]