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Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well.

Authors :
Balanta, M. A. G.
Brasil, M. J. S. P.
Iikawa, F.
Brum, J. A.
Mendes, Udson C.
Danilov, Yu. A.
Dorokhin, M. V.
Vikhrova, Olga V.
Zvonkov, Boris N.
Source :
Journal of Applied Physics. 2014, Vol. 116 Issue 20, p203501-1-203501-6. 6p. 1 Chart, 5 Graphs.
Publication Year :
2014

Abstract

We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
116
Issue :
20
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
99686600
Full Text :
https://doi.org/10.1063/1.4902857