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Negative differential resistance in GaN tunneling hot electron transistors.
- Source :
-
Applied Physics Letters . 11/17/2014, Vol. 105 Issue 20, p1-4. 3p. 1 Color Photograph, 4 Graphs. - Publication Year :
- 2014
-
Abstract
- Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM nitride
*QUANTUM tunneling
*TRANSISTORS
*ELECTRIC oscillators
*BALLISTICS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 99609356
- Full Text :
- https://doi.org/10.1063/1.4900780