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Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
- Source :
-
Optical Materials . Jul2003, Vol. 23 Issue 1/2, p207. 4p. - Publication Year :
- 2003
-
Abstract
- In this paper, we took a brief investigation on the properties of two-dimensional electron gas (2DEG) in AlGaN/InGaN/GaN heterostructures. Band profiles and the 2DEG distribution were calculated by self-consistently solving the Schro¨dinger and Poisson equations. Our calculated results indicate that the 2DEG concentration can be considerably increased with the incorporation of an InGaN layer. Quantum confinement, and thereby the 2DEG distribution are very sensitive to the strain of the incorporated InGaN layer. Hence one can design the 2DEG by incorporating proper InGaN layer into the conventional AlGaN/GaN heterostructures. These novel features are attributed to the strong polarization effect in AlGaN/InGaN/GaN heterostructures. [Copyright &y& Elsevier]
- Subjects :
- *ELECTRON gas
*QUANTUM theory
Subjects
Details
- Language :
- English
- ISSN :
- 09253467
- Volume :
- 23
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Optical Materials
- Publication Type :
- Academic Journal
- Accession number :
- 9952355
- Full Text :
- https://doi.org/10.1016/S0925-3467(03)00085-5