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Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1−xN/GaN heterostructures
- Source :
-
Optical Materials . Jul2003, Vol. 23 Issue 1/2, p197. 5p. - Publication Year :
- 2003
-
Abstract
- The specific contact resistivity (<f>ρC</f>) and interfacial reaction between Au/Pt/Al/Ti metallic multi-layers and Si-doped n-type AlxGa1−xN (n-AlGaN) layers in modulation-doped Al0.22Ga0.78N/GaN heterostructures have been investigated. By means of the measurements based on the transmission line model, the <f>ρC</f> as low as 1.6 × 10−4 Ω cm2 is obtained. Based on the X-ray diffraction analysis, it is found that N atoms in n-AlGaN layer diffuse out and a much amounts of N-vacancies are formed in n-AlGaN layer near the interface after the sample is annealed at temperatures higher than 500 °C. It induces the heavy n-type doped region in n-AlGaN near the interface, and thus leads to the decrease of the <f>ρC</f>. With increasing the annealing temperature, more N atoms in n-AlGaN layer diffuse out and react with Ti atoms. Ti2N phase is formed at the interface after the sample is annealed at 800 °C. In this case, the <f>ρC</f> further decreases. [Copyright &y& Elsevier]
- Subjects :
- *EARTH resistance (Geophysics)
*OHMIC contacts
Subjects
Details
- Language :
- English
- ISSN :
- 09253467
- Volume :
- 23
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Optical Materials
- Publication Type :
- Academic Journal
- Accession number :
- 9952353
- Full Text :
- https://doi.org/10.1016/S0925-3467(03)00083-1