SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates

MLA

Yan, F., et al. “SiC Heteroepitaxial Growth by Low Pressure Chemical Vapor Deposition on Si(1 1 1) Substrates.” Optical Materials, vol. 23, no. 1/2, July 2003, p. 113. EBSCOhost, https://doi.org/10.1016/S0925-3467(03)00070-3.

APA

Yan, F., Zheng, Y. D., Chen, P., Sun, L., & Gu, S. L. (2003). SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates. Optical Materials, 23(1/2), 113. https://doi.org/10.1016/S0925-3467(03)00070-3

Chicago

Yan, F., Y.D. Zheng, P. Chen, L. Sun, and S.L. Gu. 2003. “SiC Heteroepitaxial Growth by Low Pressure Chemical Vapor Deposition on Si(1 1 1) Substrates.” Optical Materials 23 (1/2): 113. doi:10.1016/S0925-3467(03)00070-3.