Back to Search
Start Over
Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators.
- Source :
-
Nuclear Instruments & Methods in Physics Research Section A . Dec2014, Vol. 767, p193-198. 6p. - Publication Year :
- 2014
-
Abstract
- To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage ( I – V ) amplifier, a voltage–voltage ( V – V ) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I – V and V – V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu 2 (SiO 4 )O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01689002
- Volume :
- 767
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section A
- Publication Type :
- Academic Journal
- Accession number :
- 99403686
- Full Text :
- https://doi.org/10.1016/j.nima.2014.08.042