Cite
Reply to "Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions'".
MLA
Kube, R., et al. “Reply to ‘Comment on “Contributions of Vacancies and Self-Interstitials to Self-Diffusion in Silicon under Thermal Equilibrium and Nonequilibrium Conditions.”’” Physical Review B: Condensed Matter & Materials Physics, vol. 90, no. 11, Sept. 2014, pp. 117202-1-117202–2. EBSCOhost, https://doi.org/10.1103/PhysRevB.90.117202.
APA
Kube, R., Bracht, H., Hüger, E., Schmidt, H., Lundsgaard Hansen, J., Nylandsted Larsen, A., Ager, J. W., Haller, E. E., Geue, T., Stahn, J., Uematsu, M., & Itoh, K. M. (2014). Reply to “Comment on ‘Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions.’” Physical Review B: Condensed Matter & Materials Physics, 90(11), 117202-1-117202–2. https://doi.org/10.1103/PhysRevB.90.117202
Chicago
Kube, R., H. Bracht, E. Hüger, H. Schmidt, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. W. Ager, et al. 2014. “Reply to ‘Comment on “Contributions of Vacancies and Self-Interstitials to Self-Diffusion in Silicon under Thermal Equilibrium and Nonequilibrium Conditions.”’” Physical Review B: Condensed Matter & Materials Physics 90 (11): 117202-1-117202–2. doi:10.1103/PhysRevB.90.117202.