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Anisotropic-strain-relaxation-induced crosshatch morphology in epitaxial SrTiO3/NdGaO3 thin films.

Authors :
Tan, X. L.
Chen, F.
Chen, P. F.
Xu, H. R.
Chen, B. B.
Jin, F.
Gao, G. Y.
Wu, W. B.
Source :
AIP Advances. 2014, Vol. 4 Issue 10, p1-10. 10p.
Publication Year :
2014

Abstract

We investigate the strain relaxation and surface morphology of epitaxial SrTiO3 (STO) films grown on (001)O and (110)O planes of orthorhombic NdGaO3 (NGO), and (001) plane of cubic (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. Although the average lattice mismatches are similar, strikingly regular crosshatched surface patterns can be found on STO/NGO(001)O[(110)O] films, contrary to the uniform surface of STO/LSAT(001). Based on the orientation and thickness dependent patterns and high-resolution x-ray diffractions, we ascribe the crosshatch morphology to the anisotropic strain relaxation with possibly the 60° misfit dislocation formation and lateral surface step flowin STO/NGOfilms, while an isotropic strain relaxation in STO/LSAT. Further, we show that the crosshatched STO/NGO(110)O surface could be utilized as a template to modify the magnetotransport properties of epitaxial La0.6Ca0.4MnO3 films. This study highlights the crucial role of symmetry mismatch in determining the surface morphology of the perovskite oxide films, in addition to their epitaxial strain states, and offers a different route for designing and fabricating functional perovskite-oxide devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21583226
Volume :
4
Issue :
10
Database :
Academic Search Index
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
99236315
Full Text :
https://doi.org/10.1063/1.4897960