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Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells
Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells
- Source :
-
Thin Solid Films . Jun2003, Vol. 434 Issue 1/2, p20. 4p. - Publication Year :
- 2003
-
Abstract
- ZnO thin films doped with either In or Al were electrodeposited potentiostatically at 80 °C from aqueous solutions containing Zn(NO3)2 and either InCl3 or Al(NO3)3. The films were used for the preparation of pn-junctions based on electrodeposited CuInSe2 thin films. The pn-junctions were prepared both with and without the chemical bath deposited CdS interlayer, thus demonstrating the possibility to make all-electrodeposited pn-junctions for CuInSe2 thin film solar cells. [Copyright &y& Elsevier]
- Subjects :
- *THIN films
*ZINC oxide
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 434
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 9907516
- Full Text :
- https://doi.org/10.1016/S0040-6090(03)00464-4