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Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells

Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells

Authors :
Kemell, Marianna
Dartigues, Frédéric
Ritala, Mikko
Leskelä, Markku
Source :
Thin Solid Films. Jun2003, Vol. 434 Issue 1/2, p20. 4p.
Publication Year :
2003

Abstract

ZnO thin films doped with either In or Al were electrodeposited potentiostatically at 80 °C from aqueous solutions containing Zn(NO3)2 and either InCl3 or Al(NO3)3. The films were used for the preparation of pn-junctions based on electrodeposited CuInSe2 thin films. The pn-junctions were prepared both with and without the chemical bath deposited CdS interlayer, thus demonstrating the possibility to make all-electrodeposited pn-junctions for CuInSe2 thin film solar cells. [Copyright &y& Elsevier]

Subjects

Subjects :
*THIN films
*ZINC oxide

Details

Language :
English
ISSN :
00406090
Volume :
434
Issue :
1/2
Database :
Academic Search Index
Journal :
Thin Solid Films
Publication Type :
Academic Journal
Accession number :
9907516
Full Text :
https://doi.org/10.1016/S0040-6090(03)00464-4