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Impurity-induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Aug2014, Vol. 90 Issue 6, p064422-1-064422-6. 6p. - Publication Year :
- 2014
-
Abstract
- Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated, using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high interfacial PMA while reducing the bulk magnetization and correlatively the easy-plane demagnetizing energy. As a result, the effective magnetic anisotropy tends to increase as a function of the Cr or V concentration resulting in an increase in the critical magnetic thickness at which the crossover from out-of-plane to in-plane anisotropy takes place. At the same time, the interfacial spin polarization is not affected by the magnetic layer bulk doping by Cr or V impurities and even enhanced in most situations thus favoring an increase of tunnel magnetoresistance (TMR) amplitude. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 90
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98842235
- Full Text :
- https://doi.org/10.1103/PhysRevB.90.064422