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Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy.
- Source :
-
Journal of Applied Physics . 2014, Vol. 116 Issue 12, p1-4. 4p. - Publication Year :
- 2014
-
Abstract
- X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔEV) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p3/2 and Sn 3d5/2 energy levels as references, the value of ΔEV was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔEC) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98663196
- Full Text :
- https://doi.org/10.1063/1.4896764