Test Structures for Analyzing Proton Radiation Effects in Bipolar Technologies.

Authors :: Barnaby, Hugh J.
Schrimpf, Ronald D.
Galloway, Kenneth F.
Ball, Dennis R.
Pease, Ronald L.
Fouillat, Pascal
Source :: IEEE Transactions on Semiconductor Manufacturing. May2003, Vol. 16 Issue 2, p253. 6p. 4 Black and White Photographs, 5 Diagrams, 1 Chart, 5 Graphs.
Publication Year :: 2003
Abstract: Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level. [ABSTRACT FROM AUTHOR]