Intentional anisotropic strain relaxation in (112̅2) oriented Al1−xInxN one-dimensionally lattice matched to GaN.

MLA

Buß, E. R., et al. “Intentional Anisotropic Strain Relaxation in (112̅2) Oriented Al1−xInxN One-Dimensionally Lattice Matched to GaN.” Applied Physics Letters, vol. 105, no. 12, Sept. 2014, pp. 1–4. EBSCOhost, https://doi.org/10.1063/1.4895938.

APA

Buß, E. R., Rossow, U., Bremers, H., Meisch, T., Caliebe, M., Scholz, F., & Hangleiter, A. (2014). Intentional anisotropic strain relaxation in (112̅2) oriented Al1−xInxN one-dimensionally lattice matched to GaN. Applied Physics Letters, 105(12), 1–4. https://doi.org/10.1063/1.4895938

Chicago

Buß, E. R., U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz, and A. Hangleiter. 2014. “Intentional Anisotropic Strain Relaxation in (112̅2) Oriented Al1−xInxN One-Dimensionally Lattice Matched to GaN.” Applied Physics Letters 105 (12): 1–4. doi:10.1063/1.4895938.