Cite
Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process.
MLA
Kim, W. K., et al. “Sb-Doped S/D Ultrathin Body Ge-On Insulator NMOSFET Fabricated by Improved Ge Condensation Process.” IEEE Transactions on Electron Devices, vol. 61, no. 10, Oct. 2014, pp. 3379–85. EBSCOhost, https://doi.org/10.1109/TED.2014.2350457.
APA
Kim, W.-K., Kuroda, K., Takenaka, M., & Takagi, S. (2014). Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process. IEEE Transactions on Electron Devices, 61(10), 3379–3385. https://doi.org/10.1109/TED.2014.2350457
Chicago
Kim, W.-K., Kouichi Kuroda, Mitsuru Takenaka, and Shinichi Takagi. 2014. “Sb-Doped S/D Ultrathin Body Ge-On Insulator NMOSFET Fabricated by Improved Ge Condensation Process.” IEEE Transactions on Electron Devices 61 (10): 3379–85. doi:10.1109/TED.2014.2350457.