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Ge on Bi2Sr2-xCa1+xCu2O8+y: Reduced reactivity through cluster assembly.

Authors :
Ohno, T. R.
Yang, Y.-N.
Weaver, J. H.
Kimachi, Y.
Hidaka, Y.
Source :
Applied Physics Letters. 8/13/1990, Vol. 57 Issue 7, p718. 3p.
Publication Year :
1990

Abstract

Photoemission studies of low-temperature deposition of ∼30-Å-diam Ge clusters on single-crystal Bi2 Sr2-x Ca1+x Cu2 O8+y (100) show that an interface is produced with no evidence of substrate disruption. Analysis of the superconductor core level emission as a function of coverage indicates uniform overlayer growth and complete surface coverage. These cluster-assembled interfaces were stable when warmed to 300 K, with only a slight reduction of Cu 2p3/2 satellite emission characteristic of the superconductor. In contrast, conventional atom-by-atom Ge deposition produces a Ge oxide layer and surface disruption. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*SUPERCONDUCTORS
*GERMANIUM

Details

Language :
English
ISSN :
00036951
Volume :
57
Issue :
7
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9834545
Full Text :
https://doi.org/10.1063/1.104287