Magnetic field dependence of low frequency noise in tunnel magnetoresistance heads.

Field dependence of low frequency noise in tunnel magnetoresistance (TMR) heads with different barrier materials of TiO2, Al2O3, and MgO has been studied. It is found that for MgO-TMR heads, the noise amplitude increases as the sensor is driven from parallel to antiparallel magnetization configurations. However, this field dependence of the noise is not magnetic in origin and can be accounted for by the coherent tunneling mechanism in MgO-TMR heads. For TiO2- and Al2O3- TMR heads, low frequency noise is generally independent of magnetic field when the heads are biased properly by hard bias. A noise spike related to a resistance jump in the transfer curve is measured in a head without proper hard bias. Field-dependent low frequency noise is observed for TMR heads without hard bias. The noise amplitude follows the sensitivity function of the sensor and can be attributed to the thermally activated magnetization fluctuations. Spin transfer (ST) effect on low frequency noise was examined by noise measurements of field dependence at different current directions. Extra noise appears when the TMR head is in antiparallel magnetization configurations. The results suggest that the ST-induced extra noise can be either pure 1 / f noise or the combination of both 1 / f and random telegraph noises. [ABSTRACT FROM AUTHOR]