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Elimination of light-induced effect in hydrogenated amorphous silicon.

Authors :
Chen, Yang-Fang
Source :
Applied Physics Letters. 10/3/1988, Vol. 53 Issue 14, p1277. 2p.
Publication Year :
1988

Abstract

Light-induced metastable defects in hydrogenated amorphous silicon can be eliminated by atomic hydrogen at the temperature below which the annealing effect occurs. The resulting material has a very high photosensitivity and stability. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*AMORPHOUS semiconductors
*HYDROGEN
*PHOTOCONDUCTIVITY

Details

Language :
English
ISSN :
00036951
Volume :
53
Issue :
14
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9828311
Full Text :
https://doi.org/10.1063/1.100404
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