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InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition.
- Source :
-
Applied Physics Letters . 6/20/1988, Vol. 52 Issue 25, p2099. 3p. - Publication Year :
- 1988
-
Abstract
- Planar buried heterostructure InGaAsP multiple quantum well (MQW) lasers consisting of six InGaAsP (λg =1.34 μm at room temperature) wells and five InP barriers were prepared by low-pressure metalorganic chemical vapor deposition. The threshold current was 35 mA, and the differential quantum efficiency was 45% at an emission wavelength of 1.3 μm. In the temperature range from -35 to 30 °C, the characteristic temperature was T0=57 K. No significant improvement in T0 was observed in these MQW lasers. However, stable single longitudinal mode operation could be obtained in a wide range of injection current without any mode changes. This effect was considered to be a result of gain narrowing of the MQW lasers. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*HETEROSTRUCTURES
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 52
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9827123
- Full Text :
- https://doi.org/10.1063/1.99547