Surface enhancement of the second harmonic generation on the GaAs-Al interface by the s-polarized fundamental wave.

The theoretical and experimental results demonstrate, for the first time, that the enhancement of the reflected surface second harmonic generation on the rough GaAs-Al interface arises from the nonlinear resonant excitation of the harmonic surface polariton mode with s-polarized incident radiation. The experimental results agree quite well with the theoretical analysis. An optimum surface second harmonic enhancement of ∼three orders of magnitude has been obtained. [ABSTRACT FROM AUTHOR]